Microsemi: scalable SiC MOSFET driver solutions to accelerate customer designs

Microsemi and Analog Devices announced a scalable Silicon Carbide driver reference design solution based on a range of Microsemi SiC MOSFET products and Analog Device’s ADuM4135 5KV isolated gate driver. The dual SiC MOSFET driver reference design provides user-friendly design guides enabling faster time to market for customers using Microsemi SiC MOSFETs and supports the transition to Microsemi’s next generation SiC MOSFETs.

The new reference design provides customers with a highly isolated SiC MOSFET dual-gate driver switch to provide a means for evaluating SiC MOSFETs in a number of topologies. This includes modes optimized for half-bridge switching with synchronous dead time protection and asynchronous signal transfer with no protection. It can also be configured to provide concurrent drive with the requirement to study unclamped inductive switching or double pulse testing. The reference design was developed for Microsemi SiC MOSFET discrete devices and modules and serves as an engineering tool for the evaluation of its portfolio of SiC devices. The board supports the modification of gate resistor values to accommodate most Microsemi discretes and modules.

The dual SiC MOSFET driver reference design is ideal for a wide range of end markets and applications, including aerospace (actuation, air conditioning and power distribution), automotive (hybrid/electric vehicle powertrains, electric vehicle battery chargers, DC-to-DC converters, and energy recovery), defense (power supply and high power motor drive), industrial (photovoltaic inverters, motor drives, welding,  uninterruptible power supply, switched-mode power supply, induction heating and oil drilling) and medical (MRI and X-ray power supply).


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